Contact resistance in graphene-based devices
نویسندگان
چکیده
منابع مشابه
Reducing contact resistance in graphene devices through contact area patterning.
Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are orient...
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Electrical transport studies on graphene have been focused mainly on the linear dispersion region around the Fermi level and, in particular, on the effects associated with the quasiparticles in graphene behaving as relativistic particles known as Dirac fermions. However, some theoretical work has suggested that several features of electron transport in graphene are better described by conventio...
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M. Poetschke,1 C. G. Rocha,1 L. E. F. Foa Torres,2 S. Roche,1,3,4 and G. Cuniberti1 1Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, D-01062 Dresden, Germany 2Instituto de Física Enrique Gaviola (CONICET) and FaMAF, Universidad Nacional de Córdoba, Ciudad Universitaria, 5000 Córdoba, Argentina 3CEA, INAC, SP2M, L_sim, 17 rue des Martyrs...
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Graphene’s distinctive band structure gives rise to exciting new transport properties and promising applications for carbon-based electronics.1–3 When measuring the conductance or current noise in a nanotube or a sheet of graphene, the properties of the contacts can matter as much as the electronic structure of the nanotube or graphene itself. In semiconducting nanotubes or graphene nanoribbons...
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ژورنال
عنوان ژورنال: Physica E: Low-dimensional Systems and Nanostructures
سال: 2010
ISSN: 1386-9477
DOI: 10.1016/j.physe.2009.11.080